Parameter

Unit

Symbol

Rating

Reverse breakdown voltage

V

V_R

V_BR

Operating temperature

℃

T_C

-40～+85

Storage temperature

℃

T_STG

-55～+100

Maximum optical input power

mW

P_in

100

Module mains voltage

V

V_cc/V_EE

±5

Power dissipation

mW

P_w

250

Soldering temperature(time)

℃

-

300（10s）

Parameter

Symbol

Value

Unit

Test conditions

Min

Typ

Max

Response Spectrum

λ

900~1700

nm

Active Diameter

D

200

um

Reverse breakdown voltage

V_BR

30

70

V

Operating voltage

V_R

VR-3

V

M=10

Responsivity

R_V

500

kV/W

M=10, 1.55um@τ=100ns

Dynamic range

DY

25

dB

M=10, 1.55um @τ=100ns

-3dB bandwidth

BW

70

Mhz

M=10, 1.55um @τ=100ns

Rise/Fall time

t_r

5

ns

M=10, 1.55um @τ=100ns

Noise Equivalent Power

NEP

150

fW/√Hz

M=10，f=100kHz,△=1hz

Output impedance

R_O

50

Ω

Output Voltage Swing

V_O

0.7

V

Positive Supply Current

I_CC

30

mA

Negative Supply Current

I_EE

10

mA

50ΩLoad

Temperature coefficient of V_op for constant gain

γ

0.06

0.12

0.16

V/ ^oC

-45～+85℃

Concentricity

△D

20

um

PIN #

DESC

PIN #

DESC

1

OUTPUT

4

HV, APD BIAS

2

-5V

5

GND

3

GND

6

+5V