1000μm InGaAS APD探测器-有源器件-产品中心-武汉中科锐择光电科技有限公司

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1000μm InGaAS APD探测器

The CR1000AH-1550-30M-39 includes a 1000um InGaAs Avalanche Photodiode with a hybrid preamplifier for the use in high speed, ultra-low light detection, in laser range finding, LIDAR and free space communication.

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■ Features

● Built in 1000um InGaAs APD+TIA

● High sensitivity：≥500kV/W

● High bandwidth：30Mhz

● Wavelength range:900~1700nm

● Low noise and high reliability

● TO39 package with flat window

■ Applications

● LIDAR

● Laserrange finding

● Free space optical communication (FSO)

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技术指标

■ Absolute Maximum Ratings

Parameter	Unit	Symbol	Rating
Reverse breakdown voltage	V	V_R	V_BR
Operating temperature	℃	T_C	-40～+85
Storage temperature	℃	T_STG	-55～+100
Maximum optical input power	mW	P_in	100
Module mains voltage	V	V_cc/V_EE	±5
Power dissipation	mW	P_w	250
Soldering temperature(time)	℃	-	300（10s）

Optical/Electrical Characteristics (T=25℃，unless otherwise stated)

Parameter	Symbol	Value			Unit	Test conditions
Parameter	Symbol	Min	Typ	Max	Unit	Test conditions
Response Spectrum	λ	900~1700			nm
Active Diameter	D		1000		um
Reverse breakdown voltage	V_BR	30		70	V
Operating voltage	V_R	VR-3			V	M=10
Responsivity	R_V	500			kV/W	M=10, 1.55um@τ=100ns
Dynamic range	DY	25			dB	M=10, 1.55um @τ=100ns
-3dB bandwidth	BW		30		Mhz	M=10, 1.55um @τ=100ns
Rise/Fall time	t_r		11.6		ns	M=10, 1.55um @τ=100ns
Noise Equivalent Power	NEP		150		fW/√Hz	M=10，f=100kHz,△=1hz
Output impedance	R_O		50		Ω
Output Voltage Swing	V_O	0.7			V
Positive Supply Current	I_CC			30	mA
Negative Supply Current	I_EE			10	mA	50ΩLoad
Temperature coefficient of V_op for constant gain	γ	0.06	0.12	0.16	V/^oC	-45～+85℃
Concentricity	△D			30	um

■Schematic Block Diagram

■ Block Diagram and Pin description

订货信息